Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-k gate stack materials
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چکیده
Non-uniformity of the dielectric properties of highmaterial due to random grain orientation and phase separation will lead to variation in characteristics between different devices. Here we present a model for phase separated highdielectrics and investigate, by means of 3D numerical device simulation, the intrinsic parameter fluctuations which result from this structural non-uniformity.
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تاریخ انتشار 2005